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ECSE-2210 Microelectronics Technology
Fall 2005
Class Activity 29
1. An n-channel MOS transistor has a threshold voltage of 2 V and the following parameters:
ε
Si = 3
ε
ox = 1 × 10-12 F/cm;
µ
n = 1000 cm2/Vs xox = 500 Å Z = 15 µm, L = 1 µm.
For a gate voltage VG = 4 V calculate the following:
a. The resistance between the drain and source in the linear region of operation for small
values of VD (i.e., VD = 0).
b. The drain to source current when the device is in saturation.
c. The drain voltage that should be applied for the device to be in saturation.
d. Transconductance and drain-to-source conductance under saturation.
e. Draw the equivalent circuit under saturation.
f. Calculate the cut-off frequency.
