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The solutions to class activity 22 of ecse-2210 microelectronics technology course for fall 2005. It includes the analysis of an npn transistor in saturation and forward active modes, calculation of charge stored in the base and collector current as functions of time, and discussion on the impact of rb value on the transistor's behavior.
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ECSE-2210 Microelectronics Technology Fall 2005 Class Activity 22
The material for this class activity can be found in Chapter 12, pp 449-458.
The npn switching transistor used in the circuit below has the following parameters:
questions.
Assume R B is 100 kΩ. At t = 0, the switch is turned on. (i.e., the base current increases from 0 to approximately to 0.1 mA at t = 0).
a. Will the transistor be in saturation or forward active mode for t >> 0, i.e. t = ∞? What will be the final value of the collector current?
b. Calculate and plot the charge stored in the base, Q B as a function of time, for t > 0.
c. Plot the collector current as a function of time for t > 0.
t = 0 (^) R B
RL = 1 kΩ
Suppose R B = 25 kΩ. When the switch is turned on at t = 0, the base current switches from 0 to 0.4 mA.
d. Is the transistor in saturation for t >>0?
e. Calculate and plot the collector current as a function of time and sketch it for t > 0.
f. Find the time t r required for collector current to reach steady state value.
Note that by making I B large, we can reduce the turn-on time. However, this will put the transistor into “deep saturation” mode so that the turn-off time will be increased. Often, a “Schottky diode clamp” is used to bypass the base current when the transistor is in saturation. This greatly reduces the saturation-mode build up of stored charge, and hence the turn-off time.