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EECS40 Spring 2004 Professor Sanders
Midterm Exam # 2 April 15, 2004 Time Allowed: 80 minutes
Name:____________________, ______________________ Last First
Student ID #:_______________, Signature:______________________
Discussion Section:__________________________________
This is a closed-book exam, except for use of two 8.5 x 11 inch sheet of your notes. Show all your work to receive full or partial credit. Write your answers clearly in the spaces provided.
a) (5 points) A silicon sample is uniformly doped with Boron to a concentration of 10^16 atoms / cm^3. Determine the resistivity of the sample at room temperature. 8VHHOHFWURQPRELOLW\ n = 1000 cm^2 /v-VKROHPRELOLW\ p = 400 cm^2 /v-s, Q = 1.6 · 10-19^ C and ni = 10^10 at room temperature.
b) (5 points) 7KHVDPHVDPSOHLVWKHQWREHFRXQWHUGRSHGWRDGHSWKRI m with Arsenic atoms
to create a resistor technology with resistance of 100 Ÿ/‘.
Determine the required Arsenic doping density.
b) (10 points)
In the circuit of Figure 2(b), switch S 1 is initially closed and switch S 2 is initially open and the circuit is in equilibrium. Switch S 1 is then opened and switch S 2 is closed for a sufficiently long time so that the circuit can be considered to be in equilibrium. How much energy is dissipated in the 1 k ŸUHVLVWRUGXULQJWKHWUDQVLHQW"
Hint: Think in terms of net charge and energy flow. Detailed transient analysis is NOT needed.
Mosfet M1 in Figure 3 is modeled by
D (^) L vGS VT v DS
W
i = k − +λ in saturation with parameters listed in Figure 3.
a) (5 points) Determine the required bias voltage VG so that M1 is biased in saturation with VDS = 2 V. Take v S = 0
