Examination Material for Analogue Electronics Unit - Manchester Metropolitan University, Exams of Electrical Engineering

Instructions and questions for an exam in analogue electronics for students in the beng (hons) electrical and electronic engineering and hnd electronic engineering programs at manchester metropolitan university. The exam covers topics such as crossover distortion in class b push-pull amplifiers, the design of amplifiers using different configurations, and the analysis of operational amplifiers and mosfets.

Typology: Exams

2010/2011

Uploaded on 10/06/2011

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S157 24/01/03
THE MANCHESTER METROPOLITAN UNIVERSITY
FACULTY OF SCIENCE AND ENGINEERING
DEPARTMENT OF ENGINEERING AND TECHNOLOGY
SESSION 2002/2003
Examination for the
BEng (HONS) ELECTRICAL AND ELECTRONIC ENGINEERING
HND ELECTRONIC ENGINEERING
YEAR ONE
UNIT 64EE1102 : ANALOGUE ELECTRONICS
Friday 16 May 2003
9.30 am to 11.30 am
Instructions to Candidates
Attempt FOUR questions.
Marks for each section are shown in parentheses.
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S157 24/01/

THE MANCHESTER METROPOLITAN UNIVERSITY

FACULTY OF SCIENCE AND ENGINEERING

DEPARTMENT OF ENGINEERING AND TECHNOLOGY

SESSION 2002/

Examination for the BEng (HONS) ELECTRICAL AND ELECTRONIC ENGINEERINGHND ELECTRONIC ENGINEERING YEAR ONE

UNIT 64EE1102 : ANALOGUE ELECTRONICS

Friday 16 May 2003 9.30 am to 11.30 am

Instructions to Candidates Attempt FOUR questions. Marks for each section are shown in parentheses.

  1. (a) Briefly explain, with the aid of a diagram, the problem of crossover distortion experienced in Class B push-pull amplifiers. [5] (b) (i) Explain, with the aid of a circuit diagram, how the problem of crossoverdistortion can be overcome using a Class AB amplifier configuration. (ii) Is the Class AB amplifier more or less efficient than a Class B amplifier?Explain your answer. [7] (c) State the maximum theoretical efficiency of a Class B amplifier and a Class A amplifier with a resistive load. [3] (d) For a particular Class B amplifier the dc input power is 50 watts and theefficiency of the amplifier is 60%. The maximum junction temperature of the power transistors is 200 degrees Centigrade and θJC = 2 deg C/W. Determine the maximum thermal resistance of a suitable heatsink, assuming bothoutput power transistors are mounted on the same heatsink and the maximum ambient temperature is 30 degrees Centigrade. [10]
  1. (a) Define the following terms as applied to an operational amplifier:- (i) input bias current; (ii) slew rate; (iii) output voltage range; (iv) input resistance. [8]

(b) The operational amplifier in the circuit of Figure Q3 is ideal in all respects.Derive an expression for the overall voltage gain V terms of the resistances R 1 and R 2. Hence find the required value of Ro^ /Vin^ , of the circuit in 1 and R2 given that the input resistance of the circuit is to be 1kΩ and the voltage gain –120. [17]

R 2 R 2

R 1 R^1 Vin −

+ V°

Figure Q

  1. (a) (i) Explain briefly, (including appropriate diagrams) the operation of an

ENHANCEMENT mode MOSFET. [5]

(ii) Integrated MOSFET electrical characteristics can be designed by variations in manufacturing process technology and MOSFET layoutgeometry.

State using appropriate equations and

explain using diagrams and script : - The meaning and significance of the commonly

used terms β , W and L and the ratio W/L. [10]

(b) For ONE of the following, write an essay describing: (i) the operation and manufacture of the MOSFET; (ii) the circuit topology and operation of MOSFET, tri-state binary logic. [10]