Digital Electronics - Assignment 2 - Fall 2009 | ECE 4500, Assignments of Digital Electronics

Material Type: Assignment; Professor: Grantner; Class: Digital Electronics; Subject: Electrical & Computer Engineer; University: Western Michigan University; Term: Spring 2009;

Typology: Assignments

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ECE 4500/5950 DIGITAL ELECTRONICS
SPRING 2009
ECE 4500 Project Assignment #2
ECE 5950 Project Assignment #3
(Team Project)
Total: 40 pts. (10% of course grade)
Due 3:00pm, Thursday, April 16, 2009
Demonstrations in the B-214 lab
Specifications:
Design a Dual 4 4-Bit Register Bank (DRB) by using any design style in static
CMOS technology. Each bank of the DRB (Registers R0 - R3, and R4 - R7,
respectively) should include the necessary address decoder, read/write, pre-charge, sense
amplifier, temporary buffer register and three-state buffer circuits. Please refer to Page 3
for the basic architecture, and to the “Hints” (five pages) that are posted under the Design
Clinic Section of the Class Web Page. The DRB is specified such that one bank may be
accessed simultaneously with the other one. Your final design should only have the
following input and output signals:
×
- B0_S, and B1_S active-high Bank Select signals,
- B0_DIN0 - 3, and B1_DIN0 - 3 data input lines,
- B0_A0 - A1, and B1_A0 - A1 address lines, where A1 is most significant,
- B0_R/W*, and B1_R/W* Bank Read/Write* signals (sign * stands for active
low signal),
- B0_LD, and B1_LD signals (active-high) to load temporary registers TMP0 and
TMP1, respectively,
- B0_DEN, and B1_DEN TS buffer enable signals (active-high),
- B0_DOUT0 - 3, and B1_DOUT0 - 3 data output lines,
- VDD and VSS.
The terminal configuration of the layout should allow access to all input signals from the
top, and all output signals from the bottom of the cell. The power lines should be on first-
layer metal rails that pass completely through the cell in a horizontal direction.
Be as generous as you can with the widths of the power lines so that their current-
carrying capabilities will be reasonably high. Use W/L ratios for your transistors such
that the circuit outputs will exhibit near minimum average propagation delays. You are
going to work with a 0.25-micron CMOS technology, however, the minimum feature size
(LMIN) should not be less than 1.2 µm.
Tasks:
1. Give a complete discussion of your design that includes all internal modules and
sizing
of the devices.
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ECE 4500/5950 DIGITAL ELECTRONICS

SPRING 2009

ECE 4500 Project Assignment # ECE 5950 Project Assignment # (Team Project) Total: 40 pts. (10% of course grade) Due 3:00pm, Thursday, April 16, 2009 Demonstrations in the B-214 lab

Specifications:

Design a Dual 4 4-Bit Register Bank (DRB) by using any design style in s tatic CMOS technology. Each bank of the DRB (Registers R0 - R3 , and R4 - R7 , respectively) should include the necessary address decoder, read/write, pre-charge, sense amplifier, temporary buffer register and three-state buffer circuits. Please refer to Page 3 for the basic architecture, and to the “Hints” (five pages) that are posted under the Design Clinic Section of the Class Web Page. The DRB is specified such that one bank may be accessed simultaneously with the other one. Your final design should only have the following input and output signals:

×

  • B0_S , and B1_S active-high Bank Select signals,
  • B0_DIN0 - 3 , and B1_DIN0 - 3 data input lines,
  • B0_A0 - A1 , and B1_A0 - A1 address lines, where A1 is most significant,
  • B0_R/W* , and B1_R/W* Bank Read/Write* signals (sign * stands for active low signal),
  • B0_LD , and B1_LD signals (active-high) to load temporary registers TMP0 and TMP1 , respectively,
  • B0_DEN , and B1_DEN TS buffer enable signals (active-high),
  • B0_DOUT0 - 3 , and B1_DOUT0 - 3 data output lines,
  • VDD and VSS.

The terminal configuration of the layout should allow access to all input signals from the top, and all output signals from the bottom of the cell. The power lines should be on first- layer metal rails that pass completely through the cell in a horizontal direction. Be as generous as you can with the widths of the power lines so that their current- carrying capabilities will be reasonably high. Use W/L ratios for your transistors such that the circuit outputs will exhibit near minimum average propagation delays. You are going to work with a 0.25-micron CMOS technology, however, the minimum feature size (LMIN) should not be less than 1.2 μm.

Tasks:

  1. Give a complete discussion of your design that includes all internal modules and sizing of the devices.
  1. Develop transistor-level schematic diagrams for each circuit modules (symbols) and the SRAM cell using Design Architect. Turn in a hard copy of the schematics for each symbol and the top-level module. In addition, give the total transistor count. 3. Verify the correct operation of your circuit using Eldo and Zelga. Plot your simulation results and comment on them. The functional simulation should cover both banks. The tests should include writing data $A followed by two back-to-back read operations at locations R1 , and R3 (as well as R5 and R7 ), respectively. The output data should be verified at the Bx_DOUT data lines. In addition, use Eldo and Zelga to obtain VOL and VOH for data line D0 of Bank #1 ( refer to Page 3 of the Hints), as well as min. read access and cycle times , respectively, with respect to the rising edge of the B0_S signal. You should also obtain the min. write cycle time for bit Q1 of Bank #1 (again, refer to Pages 3 and 5 of the Hints), the min. pulse width of the B1_R/W* signal, and the min. data setup time with respect to the rising edge of the B1_R/W signal*. Plot your simulation results and comment on them.
  2. Design a layout for your circuit using Icstation. Give the size of the layout area of each symbol and the whole design. Turn in a hard copy of the layout diagram of the DRB.
  3. Perform the Parasitic Extraction of the DRB layout using Calibre xRC.
  4. Demonstrate the working project to the Lab Instructor.

Project Report (hard copy) that includes: a) Introduction b) Discussion of your design c) Transistor-level schematic diagrams d) Simulation timing diagrams along with comments e) Final specs of your circuit (size of area, and area-delays product included) f) Printout of the layout diagram g) Conclusions

Each Team must submit a joint Project Report.

Bonus credit: the best design (chosen in terms of the minimum product of the layout area and the average access time delay) will be given up to +2% extra credit at the discretion of the course instructor.

Note : you will lose 4 pts. by each day your project is tardy. No credit will be given if the project is submitted after 5:00pm, Friday, April 17, 2009.