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The questions and answers for the midterm 1 exam of the eecs 143: processing and design of integrated circuits course, held in fall 1992. The exam covers topics such as lithography, oxidation, and ion implantation, and includes calculations and problem-solving questions.
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EECS 143: Processing And Design of Integrated Circuits FALL 1992
Midterm 1 Thursday, October 1, 1992
Total: 150 points
Note: "......" means unreadable
(25 points)
1. a) .............dow and 3 mask layout given below are used to fabricate a device. Sketch the cross section of this device along the 'cut-line' AA'.
Substance Process Parameter(s) 0 Substants P-type 10^16 cm- 1 Oxidation 1.0 um
2 Lithography AMSK Neg Resist 3 Etch Oxide 1.0 um 4 Oxidation 0.05 um 5 Ion Implant As Xj = 0.25 um 6 Lithography BMSK Neg Resist 7 Etch Oxide 0.05 um 8 Deposit AR 1.0 um 9 Lithography CMSK Pos Resist 10 Etch AR 1.0 um
Design Rules Waa = 2 lambda2 Eab = lambda1 + lambda Saa = 2 lambda2 Eac = lambda1 + lambda Wb = 2 lambda3 Eba = lambda1 + lambda Sbb = 2 lambda3 Ebc = lambda1 + lambda Wc = 2 lambda4 Eca = lambda1 + lambda Scc = 2 lambda4 Ecb = lambda (20 Poinst) b) Find the minimum height 'h' first in terms of W's and E's and then as a function of lambda1, lambda2, ..., lambda8.
(2) (30 Points) LITHOGRAPHY a) An x-ray source ........ A is available for proximity contact printing. At 1 mil (25.4 um) separation what will be the working resolution.
b) It is rumored in industry that for a fixed wavelength the total focal range decreases as an algebraic power of the working resolution i.e. k-sub-3 * R^alpha.Find alpha and k-sub-3 as a function of k1, k2, and lambda. Use your result to determine the resolution at which the total focal range is 1 um for the case of k1=0.5, k2=1. and lambda=0.2 um.
b) An SiO2 layer is to be used as an amorphous layer to reduce channeling. What is the maximum thickness which could be used and still result in 98% of the As going into the silicon.
c) Estimate the gate length for which the cross-gate contribution from the source implant would contribute 10% to the drain implant at the drain end of the inversion layer. Use the data from part a) and do not include the SiO2 from part b).
