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Practice Homework #6 - Microelectronics Technology | ECSE 2210, Assignments of Electrical and Electronics Engineering

Rensselaer Polytechnic Institute (RPI)Electrical and Electronics Engineering

Material Type: Assignment; Class: MICROELECTRONICS TECHNOLOGY; Subject: Electrical & Comp. Sys. Engr.; University: Rensselaer Polytechnic Institute; Term: Summer 2006;

Typology: Assignments

Pre 2010

Uploaded on 08/09/2009

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ECSE-2210 Microelectronics Technology
Homework 6
Reading list: Chapters 7, 8 and 10(pages 301-318, 327-338, 371 - 386). Hand in your solutions in class.
1. An abrupt, one-sided p+-n junction has the following characteristics on the n-side.
N-side:
ND = 4 × 1016 cm-3
Dn = 25cm2/s; Dp = 10 cm2/s
τ
p =
τ
n = 10-7s
Area A = 1 cm2
Answer the following:
a. The diode is biased in the forward direction such that the forward voltage VA = 0.6 V.
Calculate the low-frequency diffusion capacitance, and the low frequency conductance of
the diode. Draw the equivalent circuit of the diode at low frequency.
b. The diode is biased in reverse such that the applied voltage |VA| = 20 V. Calculate the
reverse bias capacitance (Hint: you can neglect Vbi). Draw the equivalent circuit,
assuming an ideal diode. Explain briefly how the circuit will change if we start
considering the non-ideal behavior of the diode.
2. Problem 7.4 in text. The IN4002 is one of the popular 4000-series general-purpose diodes. C-
V data from an IN4002 p+-n junction diode is listed in Table below. Before analyzing the
data, subtract 3 pF from each capacitance value to account for the stray capacitance shunting
the encapsulated diode. Assume area of the diode is 6×10-3 cm2. Make a 1/C2-versus-V plot
(as described in text) to determine the doping concentration in the lightly doped side. Also,
determine the built-in voltage, Vbi from the graph.
VA (V) C(pF) VA (V) C(pF) VA (V) C(pF)
0.0 38.709 -2.2 20.254 -9.0 12.639
-0.2 33.717 -2.6 19.248 -10.0 12.163
-0.4 30.567 -3.0 18.405 -11.0 11.746
-0.6 28.319 -4.0 16.762 -12.0 11.373
-0.8 26.598 -5.0 15.548 -13.0 11.037
-1.0 25.170 -6.0 14.599 -14.0 10.734
-1.4 23.060 -7.0 13.834 -15.0 10.458
-1.8 21.490 -8.0 13.189

Partial preview of the text

Download Practice Homework #6 - Microelectronics Technology | ECSE 2210 and more Assignments Electrical and Electronics Engineering in PDF only on Docsity!

ECSE-2210 Microelectronics Technology Homework 6

Reading list: Chapters 7, 8 and 10(pages 301-318, 327-338, 371 - 386). Hand in your solutions in class.

  1. An abrupt, one-sided p+-n junction has the following characteristics on the n-side. N-side:

N D = 4 × 10^16 cm- D n = 25cm^2 /s; D p = 10 cm^2 /s

τp = τn = 10-7^ s

Area A = 1 cm^2

Answer the following:

a. The diode is biased in the forward direction such that the forward voltage V A = 0.6 V. Calculate the low-frequency diffusion capacitance, and the low frequency conductance of the diode. Draw the equivalent circuit of the diode at low frequency. b. The diode is biased in reverse such that the applied voltage | V A| = 20 V. Calculate the reverse bias capacitance (Hint: you can neglect V bi ). Draw the equivalent circuit, assuming an ideal diode. Explain briefly how the circuit will change if we start considering the non-ideal behavior of the diode.

  1. Problem 7.4 in text. The IN4002 is one of the popular 4000-series general-purpose diodes. C - V data from an IN4002 p+-n junction diode is listed in Table below. Before analyzing the data, subtract 3 pF from each capacitance value to account for the stray capacitance shunting the encapsulated diode. Assume area of the diode is 6×10-3^ cm^2. Make a 1/ C^2 -versus- V plot (as described in text) to determine the doping concentration in the lightly doped side. Also, determine the built-in voltage, V bi from the graph.

V A (V) C (pF) V A (V) C (pF) V A (V) C (pF)

0.0 38.709 -2.2 20.254 -9.0 12. -0.2 33.717 -2.6 19.248 -10.0 12. -0.4 30.567 -3.0 18.405 -11.0 11. -0.6 28.319 -4.0 16.762 -12.0 11. -0.8 26.598 -5.0 15.548 -13.0 11. -1.0 25.170 -6.0 14.599 -14.0 10. -1.4 23.060 -7.0 13.834 -15.0 10. -1.8 21.490 -8.0 13.