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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
2002 Fairchild Semiconductor Corporation
Symbol Parameter Value Units
V (^) RRM Maximum Repetitive Reverse Voltage 100 V I (^) F(AV) Average Rectified Forward Current 200 mA I (^) FSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond
A
A
T (^) stg Storage Temperature Range^ -65 to +200^ °C T (^) J Operating Junction Temperature^175 °C
Symbol Characteristic Max Units
1N/FDLL 914/A/B / 4148 / 4448
P (^) D Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient^300 °C/W
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
Typical Characteristics
Small Signal Diode (continued)
Symbol Parameter Test Conditions Min Max Units
VR Breakdown Voltage I (^) R = 100 μA I (^) R = 5.0 μA
V
V
VF Forward Voltage 1N914B/ 1N916B 1N914/916/ 1N914A/916A 1N916B 1N914B/
I (^) F = 5.0 mA I (^) F = 5.0 mA I (^) F = 10 mA I (^) F = 20 mA I (^) F = 20 mA I (^) F = 100 mA
mV mV V V V V IR Reverse Current V (^) R = 20 V V (^) R = 20 V, TA = 150°C V (^) R = 75 V
nA μA μA C (^) T Total Capacitance 1N916A/B/ 1N914A/B/
V (^) R = 0, f = 1.0 MHz V (^) R = 0, f = 1.0 MHz
pF pF trr Reverse Recovery Time I (^) F = 10 mA, V (^) R = 6.0 V (60mA), I (^) rr = 1.0 mA, R (^) L = 100Ω
4.0 ns
Electrical Characteristics TA = 25°C unless otherwise noted
110
120
130
140
150
160 Ta=25 oC
1 2 3 5 10 20 30 50 100
Reverse Voltage, V
[V]R
Reverse Current, I (^) R [uA]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100 uA
0
20
40
60
80
100
120
10 20 30 50 70 100
T a= 25 o^ C
Reverse Current, I
[nA]R^
R everse V oltage, V (^) R [V]
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
250
300
350
400
450
500
550
1 2 3 5 10 20 30 50 100
Ta= 25 o^ C
Forward Voltage, V
[mV]R
Forward Current, I (^) F [uA]
Figure 3. Forward Voltage vs Forward Current
VF - 1 to 100 uA
450
500
550
600
650
700
750
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 oC
Forward Voltage, V
[mV]F
Forward Current, I (^) F [m A]
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
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