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diodos, Ejercicios de Física

Asignatura: Física, Profesor: , Carrera: Ingeniería de Telecomunicación, Universidad: USPCEU

Tipo: Ejercicios

2017/2018

Subido el 19/03/2018

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DATA SHEET
Product specification
Supersedes data of 1996 Sep 03 1999 May 25
DISCRETE SEMICONDUCTORS
1N4148; 1N4448
High-speed diodes
M3D176
pf3
pf4
pf5
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DATA SHEET

Product specification

Supersedes data of 1996 Sep 03

1999 May 25

DISCRETE SEMICONDUCTORS

1N4148; 1N

High-speed diodes

M3D

High-speed diodes 1N4148; 1N

FEATURES

  • Hermetically sealed leaded glass

SOD27 (DO-35) package

  • High switching speed: max. 4 ns
  • General application
  • Continuous reverse voltage:

max. 75 V

  • Repetitive peak reverse voltage:

max. 75 V

  • Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

  • High-speed switching.

DESCRIPTION

The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass SOD

(DO-35) packages.

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

The diodes are type branded.

handbook, halfpage

MAM

k (^) a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak reverse voltage − 75 V

VR continuous reverse voltage − 75 V

IF continuous forward current see Fig.2; note 1 − 200 mA

IFRM repetitive peak forward current − 450 mA

IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to

surge; see Fig.

t = 1 μs − 4 A

t = 1 ms − 1 A

t = 1 s − 0.5 A

Ptot total power dissipation Tamb = 25 °C; note 1 − 500 mW

Tstg storage temperature − 65 +200 °C

Tj junction temperature − 200 °C

High-speed diodes 1N4148; 1N

GRAPHICAL DATA

Fig.2 Maximum permissible continuous forward

current as a function of ambient

temperature.

handbook, halfpage

MBG

Tamb ( oC)

IF

(mA)

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

MBG

VF (V)
IF

(mA)

(1) (2) (3)

(1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents. Tj = 25 °C prior to surge.

handbook, full pagewidth

MBG

(^10) t p (μs)

IFSM
(A)
10 −^1

High-speed diodes 1N4148; 1N

Fig.5 Reverse current as a function of junction

temperature.

(1) VR = 75 V; typical values. (2) VR = 20 V; typical values.

handbook, halfpage

Tj (o^ C)

10 −^1
10 −^2

(1)

IR

(μA)

MGD

(2)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

MGD

VR (V)

Cd (pF)

High-speed diodes 1N4148; 1N

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

OUTLINE^ REFERENCES
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ

Note

  1. The marking band indicates the cathode.
SOD27 A24 DO-35 SC-40 97-06-

Hermetically sealed glass package; axial leaded; 2 leads SOD

UNIT

b max.

mm 0.

D

max.

G 1

max.

1.85 4.25 25.

L

min.

DIMENSIONS (mm are the original dimensions)

D L^ G 1 L

b

(1)

0 1 2 mm

scale

© Philips Electronics N.V. SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

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Printed in The Netherlands 115002/03/pp8 Date of release: 1999 May 25 Document order number: 9397 750 05892