Pré-visualização parcial do texto
Baixe SCR Technology IRF e outras Notas de estudo em PDF para Engenharia Elétrica, somente na Docsity!
APPENDIX 1 Symbols and Terms The symbols and terms listed here are from EIA-NEMA Standard “Recommended Standards for Thyristors,” June 1972 (EIA Standard RS-397 and NEMA Slandard SK516-1972), Additional figures ilustrating the symbols end some specific definitions are presented from International Rectifier's Application Note AN-813. Classes of Thyristors Thyristor A bistable semiconductor device comprising three or more junctions, which can be switched from the off-state to the on-state or vice versa, such switching oceurring with- in at least one quadrant of the prin- cipal voltage-current characteristic. Reverse Blocking Diode Thyristor A two-terminal thyristor which switches only for positive anode- to-cathode voltages and exhibits a reverse blocking state for negative anode-to-cathode voltages. Reverse Blocking Triode Thyristor A three-terminal thyristor which switches only for positive anode-to- cathode voltages and exhibits a re- verse blocking state for negative anode-to-cathode voltages. Reverse Conducting Diode Thyristor A two-terminal thyristor which switches only for positive anode-to- cathode voltages and conducts large currents at negative anode-to-cath- ode voltages comparable to magni- tude to the on-state voltages. Reverse Conducting Triode Thyristor A three-terminal thyristor which switches only for positive anode-to- cathode voltages and conducts large currents at negative anode-to-cath- ode voltages comparable in magni- tude to the on-state voltages. Bidirectional Diode Thyristor A two-terminal thyristor having substantially the same switching be havior in the first and third quad- rants of the principal voltage-cur. rent characteristic. Bidirectional Triode Thyristor A three-terminal thyristor having substantially the same switching be- havior in the fitst and third quad- rants of the principal voltage-cur- rent characteristic. Turm-Off Thyristor A thyristor which can be switched from the on-state to the off-state and vice versa by applying control signals of appropriate polarities to the gate terminal, with the ratio of triggering power to triggered power appreciably less than one. P-Gate Thyristor A thyristor in which the gate terminal is connected to the P- region adjacent to the region to which the cathode terminal is comnected and which is normally switched to the on-state by ap- plying a positive signal between am INTERNATIONAL RECTIFIER the gate and cathode terminals. Standard production SCRs are P- gate thyristors. N-Gate Thyristor A thyristor in which the gate terminal is connected to the N- region adjacent to the region to which the anode terminal is con- nected and which is normally switched to the on-state by apply- ing a negative signal between gate and anode terminals. Semiconductor Controlled Rectifier fSCR) An alternative name used for the reverse blocking triode thyristor. Physical Structure Nomenclature Electrode (of a semiconductor de- vice) An electric and mechanical con- tact to a region of a semiconductor device. Anode The electrode by which current enters the thyristor, when the thy- ristor is in the on-state with the gate open-circuited. Note: This term does not apply to bidirectional thyristors. Cathode The electrode by which current leaves the thyristor, when the thy- ristor is in the on-state with the gate open-circuited. Note: This term does not apply to bidirectional thyristors. Gate An electrode connected to one of the semiconductor regions for introducing control current. Junction (of a semiconductor de- vice) A region of transition between semiconductor regions of different electrical properties (e.g., n-n+, p-n, p-p+ semiconductors), or between a metal and a semiconductor. Collector Junction The junction across which the polarity of the voltage reverses when switching occurs. Terminal (of a semiconductor de- vice) The externally available point of connection to one or more elec- trodes. Main Terminals The terminals through which the principal current flows. Main Terminal 1 (of a bidirectional thyristor) The main terminal which is named “1” by the device manu- facturer. Main Terminal 2 (of a bidirectional thyristor) The main terminal which is named “2” by the device manu- facturer. Anode Terminal The terminal which is connected to the anode. Note: This term does not apply to bidirectional thyristors. Cathode Terminal The terminal which is connect- ed to the cathode., 472 INTERNATIONAL RECTIFIER Anode-to-Cathode Voltage (Anode Voltage) The voltage between the anode terminal and the cathode terminal. Notes: 1. It is called a positive when the anode potential is higher than the cathode potential, and called negative when the anode potential is lower than the cathode potential. 2. This term does not apply to bidirectional thyristors. Forward Voltage (of a reverse blocking or reverse conducting thyristor) A positive anode-to-cathode voltage. OffState Voltage The principal voltage when the thyristor is in the off-state. Working Peak Off-State Voltage The maximum instantaneous value of the off-state voltage which oceuts across a thyristor, exeluding all repetitive and nonrepetitive tran- sient voltages. Repetitive Peak Off-State Voltages The maximum instantaneous va- lue of the off-state voltage which oceurs across a thyristor, including all repetitive transient voltages, but excluding all non-repetitive tran- sient voltages. Nonrepetitive Peak OffState Volt- age The maximum instantaneous va- lue of any nonrepetitive transient off-state voltage which oceurs ac- ross the thyristor. Critical Rate-ofRise of Off-State Voltage The minimum valve of the rate- 474 ofrise of principal voltage which will cause switching from the off- state to the on-state. Breakover Voltage The principal voltage at the breakover point. On-State Voltage The principal voltage when the thyristor is in the on-state. Minimum On-State Voltage The minimum positive principal voltage for which the differential resistance is zero with the gate open-circuited. Principal Current A generic term for the currênt through the collector junction. Note: It is the current through the main teriminals. On-State Current The principal current when the thyristor is in the on-state. Forward Current (of a reverse blocking or reverse conducting thyristor) The ptincipal current for a posi- tive anode-to-cathode voltage. Peak Repetitive On-State Current The peak value of the on-state current including all repetitive tran- sient currenis, Overload On-State Current An on-state current of substan- tially the same waveshape as the normal on-state current and having a greater value than the normal on-state current. Surge (Nonrepetitive) On-State Cur- rent An on-state current of short- time duration and specified wave- shape. Critical Rate-of-Rise of On-Stote Current The maximum value of the rate- of-rise of on-state current which a thyristor can withstand without de- leterious effect. Off-State Current The principal current when the thyristor is in the off-state. Breakover Current The principal current at the breakover point. Holding Current The minimum principal current required to maintain the thyristor in the onsstate. Reverse Voltage (of a reverse biock- ing or reverse conducting thyristor) A negative anodeto-cathode voltage. Working Peak Reverse Voltage (of a reverse blocking thyristor) The maximum instantaneous va- lue of the reverse voltage which occurs across the thyristor, exclud- ing all repetitive and nonrepetitive transient voltages. Repetitive Peak Reverse Voltage (of a reverse blocking thyristor) The maximum instantaneous va- lue of the reverse voltage which occurs across the thyristor, includ- ing ali repetitive transient voltages, but excluding all nonrepetitive tran- sient voltages. Nonrepetitive Peak Reverse Voltage (of a reverse blocking thyristor) APPENDIK I The maximum instantaneous va- lue of any nonrepetitive transient reverse voltage which oceurs across athyristor. Reverse Breakdoum Voltage (of q reverse blocking thyristor) The value of negative anode-to- cathode voltage at which the differ- ential resistance between the anode and cathode terminais changes ftom a high value to a substantially lower value. Reverse Current (of a reverse block- ing or reverse conduciing thyristor) The principal current for nega- tive anode-to-cathode voltage. Reverse Blocking Current (of a re- verse blocking thyristor) The reverse current when the thyristor ís in the reverse blocking state. Reverse Breskdown Current (of a reverse blocking thyristor) The principal current at the re- verse breakdown voltage. Gate Voltage The voltage between a gate ter- minal and a specified main ter- minal. Gate Trigger Voltage The gate voltage required to pro- duce the gate trigger current. Gate Nontrigger Voltage The maximum gate voltage which will not cause the thyristor to switch from the off-state to the on-state. Forward Gate Voltage The voltage between the gate terminal and the terminal of an 475 Thyristor Letter Symbols Generai Letter Symbols: Ambient Temperature... Case Temperature Virtual Junction Temperature. ...... Storage Temperature ... Thermal Resistance ....R, Junction-to-Ambient.. . Junction-to-Case .... Case-to-Ambient .... 'Transient Thermal Impedanee ....... Junction-to-Ambient. . Junction-to-Case . Delay Time Rise Time ... Fal) Time Reverse Recovery Time. . Gate-Controlled Turr-On Time. ..... Gate-Controlted Turn-Off Time Circuit-Commutated Turn-Off Time APPENDIS I Letter Symbol Subscripts The following letters are used as qualifying subscripts for Thyristor Letter Symbols: Anode Cathode Gate Reverse or, as a Second Subscript, Repetitive Oft-State, Non-Trigger On-State, Trigger Maximum Value Minimum Value Average Value Total RMS Value Working Open Cireuit Short Circuit, or as a Second Subscript, Non-Repetitive Specified Circuit Holding Breakdown Breakover Turn-0ff, Recovery Threshold - Overload value during switching of a thy- ristor from the off-state to the on- state by a gate pulse. Note: This time interval will be equal to the rise time of the on-state current only for pure re- sistive loads. Gate Controlled Turn-Off Time (of a turn-off lhyristor) The time interval between a spe- cified point at the beginning of the gate pulse and the instant when the principal current has decreased to a specified value during switehing from the on-state to the off-state by a gate pulse. Circuil-Commutated Turn-Off Time The time interval between the instant when the principal current has decreased to zero after external switching of the principal voltage circuit, and the instant when the thyristor is capable of supporting a specified principal voltage with- out turning on. Reverse Recovery Time (of a reverse blocking thyristor) The time required for the princi- pal current or voltage to recover to a specified value after instantaneous switching from an on-state to a re- verse voltage or current. 4m INTERNATIONAL RECTIFIER [TR] WOA a (AVÍTA TA (SNH)CA BEI OA 1215-310 — tosa — (OB)A — aBerOA J9n0yBalg WIA TA (AVILA IA AULA SBEIIOA SIEIS-UO - utug) — u(ug) — juaung UMOP%BS1g as19A9H WEH] . o - = JU94NZ 9SI9A9 Xeog eanadag GET Hi SET 8 ERERT IUSMND 9SI9ADH WHa] - - - - qUGLIND SEIS -HO Nod aaInadoy Wa TAvIar dh (susia) Wang Ses-HO = — tos) - UGLY 19A0%E91H (AOL - - o - main SJEIG-UQ PpeojISAQ WSL| - l - - taling MAGO (a Hadag-uoN) efang WBL - - = - quand SEIS-UQ NES] PANICO AL di (AVL 4 (SIANHIL| JUSUND MEIG-UO aNAvA aNTVA LNINOdINOO LNINOdINOO aMIvA ALILNVYNO TV LOL TV LOL ONILYNHAI LIV | ONLEVNHILTY SNS Divad) SNOINVINVISNI Him ON IVIOL WINWIXVIN “INTvA DA “aniva da aIQUL IOQUIÁS 199977 478 5 y É z WD DHa (AVÍONg — — uonedissig HQ-UIN] INLIq ld (Avg — — uonedissid ug-un | WDa Sa TAVIOg D — uonedissig] 18MOg s1e9 WODA DM — DOA — aBes JO A HQ-UN | ajegy — — BEIJO A NASA doa G9A JaBBH VON a29) WIDA IDA — 1DA - aBei OA JaBBII| Sie WDA Ba taviDA DA - SBBIOA S129 WOD] DMI — Dt I JUSn9 HO-UM eis NOD| DO — qo — Main 486644 [-UON 2120) WI 1 — 19 — Juaung J96Btu 4 ater anAvA INTVA LNINOdINOI LNINOdINOO aNIvA ALILNVINO TvIOL AVIOL ONILVYNHILTV) ONILVNHILTV sWs Divad) SNOaINVINVISNI HLIM ON TvIOL INNIAIXVIA “aNIvA 20 “3nIvA da (Ponuguoo) age, Toquiás 1297 480 Specific Definitions Used in Inter- national Rectifier Data Sheets IrsM 1% Peak OneCycle Non-Re- current Surge Current. The maximum on-state current having a single half cycle (8.3 milliseconds) duration for a 60 Hz, single phase resistive load. The surge may be preceded and fol- lowed by maximum rated voltage, current, and junc- tion temperature condi. tions and maximum allow- able gate power may be coneurrently — dissipated. However, limitations with respect to on-state current during switching should not be exceeded. T Squared t. A measure of maximum on-state non-re- current over-current capa- bility for pulse durations between 1.5 and 8.3 milli- seconds. Lis in RMS amp- eres and t is pulse duration in seconds. (The same con- ditions as listed above for Irsm apply.) APPENDIX 1 IRQM Peak Reverse Recovery Cur. VAM VTo TIME rent, The peak reverse cur. rent obtained when instan- taneously switching from an on-state current to a reverse voltage in a given cireuit. Peak Anode Voltage. The maximum instantaneous va lue of principal voltage witich may be applied to the anode. If breakover occurs at this voltage or at some lower value, no dam- age to the SCR will result. If a higher voltage is ap- plied and breakover occurs, the SCR may be damaged. Turm-On Voltage. The principal voltage at some specified principal current and at some specified time during the transition between the offstate and the on-state, VOLTAGE NT KING PEAK REVERSE VOLTAGE ç PEAK REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE VOLTAGE Figure 1. Reverse Voltage Symbols 
