Effective Mass - Microelectronics Technology - Slides | ECSE 2210, Study notes of Electrical and Electronics Engineering

Material Type: Notes; Professor: Schubert; Class: MICROELECTRONICS TECHNOLOGY; Subject: Electrical & Comp. Sys. Engr.; University: Rensselaer Polytechnic Institute; Term: Spring 2006;

Typology: Study notes

Pre 2010

Uploaded on 08/09/2009

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Chapter 2-2. Carrier properties
Mass like charge is a very basic property of electrons and holes.
The mass of electrons in a semiconductor may be different than its
mass in vacuum.
Effective mass concept
t
v
mqF
d
d
0
== Ε
t
v
mqF *
d
d
n
== Ε
2
Electrons moving inside a semiconductor crystal will collide with
semiconductor atoms, there by causing periodic deceleration of
the carriers
In addition to applied electric field, the electrons also experience
complex field forces inside the crystals
•The effective mass can have different values along different
directions
•The effective mass will be different depending on the property we
are observing. So you can have conductivity effective mass,
density of states effective mass, etc.
Effective mass
pf3
pf4
pf5

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1

Chapter 2-2. Carrier properties

Mass like charge is a very basic property of electrons and holes. The mass of electrons in a semiconductor may be different than its mass in vacuum.

Effective mass concept

t

v F q m d

d = − Ε = 0 t

v F q m* d

d = − Ε = n

  • Electrons moving inside a semiconductor crystal will collide with semiconductor atoms, there by causing periodic deceleration of the carriers
  • In addition to applied electric field, the electrons also experience complex field forces inside the crystals
  • The effective mass can have different values along different directions
  • The effective mass will be different depending on the property we are observing. So you can have conductivity effective mass, density of states effective mass, etc.

Effective mass

3

Carrier numbers in intrinsic materials

Intrinsic semiconductor or pure semiconductor has equal numbers of electrons and holes at a particular temperature.

Number of electrons/cm^3 [ n ] = number of holes/cm^3 [ p ] Why is n = p?

This is an intrinsic property of the semiconductor and is called intrinsic carrier concentration, n i

At T = 300 K, n i = 2 × 106 / cm^3 in GaAs 1 × 1010 / cm^3 in Si 2 × 1013 / cm^3 in Ge

How large is this compared to the number of Si atoms/cm^3? What happens to n i at higher temperature? At 0 K?

7

Visualization of (a) donors and (b) acceptors

Phosphorus (P) atom Boron (B) atom

Pseudo-hydrogen atom model for donors

0.05 eV

2

s 0

0 0

136 eV n 2 (4π )

*n q 2 s 0

4 d (^)  ≈ − 

 

 

 ε

ε = − ε

= − m K

m . K

m E h

136 eV 2 ( 4 0 )^2

4 0 H_._

m q E = − πε

h

(see page 24 of text)

Instead of m 0 , we have to use m n*^. Instead of εo, we have to use K s εo.

K s is the relative dielectric constant of Si ( K s, Si = 11.8).

This is an approximate value. More accurate values are given next.

9

Binding energies for dopants

Questions: How much energy is required to break a Si-Si bond? How much energy is required to break the 5th electron from As in Si? How much energy is required to break a Si-Si bond when that bond is adjacent to a B atom? Does the freeing of an electron from a donor atom create an extra hole?

Energy-band model for donors