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2N2218-2N
2N2221-2N
January 1989
HIGH-SPEED SWITCHES
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit V (^) CBO Collector-base Voltage (I (^) E = 0) 60 V V (^) CEO Collector-emitter Voltage (I (^) B = 0) 30 V V (^) EBO Emitter-base Voltage (I (^) C = 0) 5 V I (^) C Collector Current 0.8 A P (^) t o t Total Power Dissipation at T (^) amb ≤ 25 °C for 2N2 21 8 and 2 N22 19 for 2N2 22 1 and 2 N22 22 at T (^) c as e ≤ 25 °C for 2N2 21 8 and 2 N22 19 for 2N2 22 1 and 2 N22 22
W
W
W
W
T (^) st g Storage Temperature – 65 to 200 °C T (^) j Junction Temperature 175 °C
DESCRIPTION
TO-39 TO-
INTERNAL SCHEMATIC DIAGRAM
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit I (^) CBO Collector Cutoff Current (I (^) E = 0)
V CB = 50 V
V (^) CB = 50 V T (^) am b = 150 °C
nA μA I (^) E BO Emitter Cutoff Current (I (^) C = 0)
V (^) E B = 3 V 10 nA
V (^) ( BR) CBO Colllector-base Breakdown Voltage (I (^) E = 0)
I (^) C = 10 μA 60 V
V (^) (BR)CE O * Collector-emitter Breakdown Voltage (I (^) B = 0)
I (^) C = 10 mA 30 V
V (^) ( BR) EBO Emittter-base Breakdown Voltage (I (^) C = 0) I^ E^ = 10^ μA^5 V V (^) CE (s at )* Collector-emitter Saturation Voltage
I (^) C = 150 mA I (^) C = 500 mA
I (^) B = 15 mA I (^) B = 50 mA
V
V
V (^) B E (s at )* Base-emitter Saturation Voltage
I (^) C = 150 mA I (^) C = 500 mA
I (^) B = 15 mA I (^) B = 50 mA
V
V
h (^) F E * DC Current Gain for 2N 221 8 I (^) C = 0.1 mA I (^) C = 1 mA I (^) C = 10 mA I (^) C = 150 mA I (^) C = 500 mA I (^) C = 150 mA for 2N 221 9 I (^) C = 0.1 mA I (^) C = 1 mA I (^) C = 10 mA I (^) C = 150 mA I (^) C = 500 mA I (^) C = 150 mA
and 2N 22 21 V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 1 V and 2N 22 22 V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 10 V V (^) CE = 1 V
f (^) T Transition Frequency I (^) C = 20 mA f = 100 MHz
V (^) CE = 20 V 250 MHz
C (^) CBO Collector-base Capacitance I (^) E = 0 f = 100 kHz
V (^) CB = 10 V 8 pF
R (^) e (h ie ) Real Part of Input Impedance
I (^) C = 20 mA f = 300 MHz
V CE = 20 V 60 Ω
- (^) Pulsed : pulse duration = 300 μs, duty cycle = 1 %.
THERMAL DATA
2 N22 18
2 N22 19
2N 222 1
2N 222 2
R (^) t h j- cas e R (^) t h j-amb
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Max Max
50 °C/W
187.5 °C/W
83.3 °C/W
300 °C/W
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.
B 0.49 0.
D 6.6 0.
E 8.5 0.
F 9.4 0.
G 5.08 0.
H 1.2 0.
I 0.9 0.
L 45 o^ (typ.)
L
G
I
D A
F E
B
H
TO39 MECHANICAL DATA
P008B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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