2N2221
2N2222
NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221, 2N2222
types are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 800 mA
Power Dissipation PD 400 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 438 °C/W
Thermal Resistance ΘJC 146 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=50V - 10 nA
ICBO V
CB=50V, TA=150°C - 10 μA
IEBO V
EB=3.0V - 10 nA
BVCBO I
C=10μA 60 - V
BVCEO I
C=10mA 30 - V
BVEBO I
E=10μA 5.0 - V
VCE(SAT) I
C=150mA, IB=15mA - 0.4 V
VCE(SAT) I
C=500mA, IB=50mA - 1.6 V
VBE(SAT) I
C=150mA, IB=15mA 0.6 1.3 V
VBE(SAT) I
C=500mA, IB=50mA - 2.6 V
fT V
CE=20V, IC=20mA, f=100MHz 250 - MHz
Cob V
CB=10V, IE=0, f=100kHz - 8.0 pF
Cib V
EB=0.5V, IC=0, f=100kHz - 30 pF
TO-18 CASE
R1 (30-January 2012)
www.centralsemi.com
