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N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (DPAK)
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T (^) C = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V (^) GS ±20 V TC = 25 °C 12 Continuous Drain Current TC = 100 °C
ID
Pulsed Drain Current 1 IDM 45
A
Avalanche Energy L = 0.1mH EAS 60 Repetitive Avalanche Energy^2 L = 0.05mH EAR 3 mJ
TC = 25 °C 48 Power Dissipation TC = 100 °C
PD
W
Operating Junction & Storage Temperature Range T (^) j , Tstg -55 to 150 Lead Temperature ( 1 / 16 ” from case for 10 sec.) TL 275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RθJC 3 Junction-to-Ambient RθJA 75 Case-to-Heatsink (^) RθCS 1
°C / W
(^1) Pulse width limited by maximum junction temperature. (^2) Duty cycle ≤ 1 %
ELECTRICAL CHARACTERISTICS (T (^) C = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (^) (BR)DSS VGS = 0V, ID = 250μA 25 Gate Threshold Voltage V (^) GS(th) VDS = VGS, ID = 250μA 0.8 1.2 2.
V
Gate-Body Leakage I (^) GSS VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V 25 Zero Gate Voltage Drain Current I (^) DSS VDS = 20V, VGS = 0V, T (^) J = 125 °C 250
μA
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V(BR)DSS R DS(ON) ID
25 50m 12A G
D
S
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (DPAK)
Lead-Free
NIKO-SEM
On-State Drain Current 1 ID(ON) VDS = 10V, VGS = 10V 12 A Drain-Source On-State VGS^ = 5V, ID^ = 12A^70 Resistance 1 R^ DS(ON) VGS = 10V, ID = 12A 50 90 m Forward Transconductance 1 g (^) fs VDS = 15V, ID = 12A 16 S DYNAMIC Input Capacitance C (^) iss 450 Output Capacitance C (^) oss 200 Reverse Transfer Capacitance C (^) rss
VGS = 0V, VDS = 15V, f = 1MHz 60
pF
Total Gate Charge 2 Q (^) g 15 Gate-Source Charge 2 Q (^) gs 2. Gate-Drain Charge 2 Q (^) gd
VDS = 0.5V(BR)DSS , VGS = 10V,
ID = 6A 7.
nC
Turn-On Delay Time 2 td(on) 6. Rise Time 2 tr VDS = 15V, R (^) L = 1 6. Turn-Off Delay Time 2 td(off) ID ≅ 12A, VGS = 10V, R (^) GS = 2.5 20 Fall Time 2 tf 5.
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 ° C)
Continuous Current I (^) S 12 Pulsed Current^3 ISM 20
A
Forward Voltage 1 VSD IF = IS, VGS = 0V 1.5 V Reverse Recovery Time t (^) rr 30 nS Peak Reverse Recovery Current I (^) RM(REC) IF = IS, dlF /dt = 100A / μS 15 A Reverse Recovery Charge Q (^) rr 0.043 μC (^1) Pulse test : Pulse Width ≤ 300 μsec, Duty Cycle ≤ 2%. (^2) Independent of operating temperature. (^3) Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P3055LDG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-252 (DPAK)
Lead-Free
NIKO-SEM
TO-252 (DPAK) MECHANICAL DATA
mm mm
Dimension
Min. Typ. Max.
Dimension
Min. Typ. Max.
A 9.35 10.4 H 0.89 2.
B 2.2 2.4 I 6.35 6.
C 0.45 0.6 J 5.2 5.
D 0.89 1.5 K 0.6 1
E 0.45 0.69 L 0.5 0.
F 0.03 0.23 M 3.96 4.57 5.
G 5.2 6.2 N
G
A
H
I^ J
B
C
M
L
K
E D
F
1
3 2
