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FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
APPLICATIONS
High-Side Synchronous Buck DC/DC
Conversion
− Desktop
− Server
Vishay Siliconix
Document Number: 72290 S-41168—Rev. B, 14-Jun-
www.vishay.com
N-Channel 22-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) ( ) ID (A)d
24 c
0.0095 @ VGS = 10 V 49
24 c 0.017 @ VGS = 4.5 V 36
D
G
S
N-Channel MOSFET
TO-
G D S
Top View
Drain Connected to Tab
Ordering Information: SUD50N024-09P SUD50N024-09P—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Pulse Voltage VDS(pulse) 24 C
Drain-Source Voltage VDS 22 V
Gate-Source Voltage VGS 20
Continuous Drain Currenta
T C = 25C
ID
49d Continuous Drain Currenta T (^) C= 100C
ID
34 d
Pulsed Drain Current IDM 100 A
Continuous Source Current (Diode Conduction) a^ IS 4.
Avalanche Current, Single Pulse L = 0.1 mH IAS 29
Avalanche Energy, Single Pulse EAS 42 mJ
Maximum Power Dissipation
TA = 25C
PD
6.5a Maximum Power Dissipation W T (^) C = 25C
PD
W
Operating Junction and Storage Temperature Range T (^) J , Tstg −55 to 175 C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction to Ambienta
t 10 sec R
Maximum Junction-to-Ambienta Steady State
RthJA (^40 50) C/W
Maximum Junction-to-Case RthJC 3.1 3.
C/W
Notes a. Surface Mounted on FR4 Board, t 10 sec. b. Limited by package c. Pulse condition: TA = 105C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
Vishay Siliconix
www.vishay.com Document Number: 72290 S-41168—Rev. B, 14-Jun-
SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ a^ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250^ A^22 V Gate Threshold Voltage VGS(th) VDS = VGS , ID = 250 A 0.8 3.
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = 20 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS A VDS = 20 V, VGS = 0 V, TJ = 125C 50
A
On-State Drain Currentb^ ID(on) VDS = 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 20 A 0.008 0.
Drain-Source On-State ResistanceDrain Source On State Resistanceb rr (^) DS(on) (^) DS(on) VGS = 10 V, ID = 20 A, TJ = 125C^ 0.014^ VGS = 4.5 V, ID = 20 A 0.0135 0.
Forward Transconductanceb^ gfs VDS = 15 V, ID = 20 A 15 S
Dynamica
Input Capacitance Ciss 1300 Output Capacitance Coss VGS = 0 V, VDS = 10 V, f = 1 MHz^470 pF Reverse Transfer Capacitance Crss 275
p
Gate Resistance Rg 1.6 4.0 6 Total Gate Chargec^ Q (^) g 10.5 16 Gate-Source Chargec^ Q (^) gs VDS = 10 V, VGS = 4.5 V, ID = 50 A 4.2 (^) nC Gate-Drain Chargec^ Q (^) gd
VDS 10 V, VGS 4.5 V, ID 50 A
nC
Turn-On Delay Timec^ td(on) 8 12 Rise Timec^ tr (^) V DD = 10 V, RL = 0.2^ ^
ns Turn-Off Delay Timec^ td(off)
VDD = 10 V, RL = 0.2
ID 50 A, VGEN = 10 V, Rg = 2.5 (^25 ) ns
Fall Timec^ tf
g 12 20
Source-Drain Diode Ratings and Characteristic (TC = 25 C)
Pulsed Current ISM 100 A Diode Forward Voltageb^ VSD IF = 50 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 A/s 35 70 ns
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2%. c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
Drain Current (A)
I D
VGS − Gate-to-Source Voltage (V)
Drain Current (A)
I D
25 C
125 C
T C = − 55 C
VGS = 10 thru 6 V
3 V
4 V
5 V
Vishay Siliconix
www.vishay.com Document Number: 72290 S-41168—Rev. B, 14-Jun-
THERMAL RATINGS
Safe Operating Area
VDS − Drain-to-Source Voltage (V)
Drain Current (A)
I D
TA = 25C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
10 −^4 10 −^3 10 −^2 10 −^1 1
Normalized Effective Transient
Thermal Impedance
Maximum Drain Current vs.
Ambiemt Temperature
TA − Ambient Temperature (C)
Drain Current (A)
I D
Single Pulse
Duty Cycle = 0.
1 ms 10 ms
100 ms
dc
10, 100 s
1 s
10 s 100 s
Limited by r (^) DS(on)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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