IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW50N65F5
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
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IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID
fastandsoftantiparalleldiode
IKW50N65F
650VDuoPackIGBTandDiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwith RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithRAPID1fastandsoftantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition:
•Pin1-gate •Pin2&backside-collector •Pin3-emitter
G
C
E
G
C
E
KeyPerformanceandPackageParameters Type V CE I C V CEsat, T vj=25°C T vjmax Marking Package IKW50N65F5 650V 50A 1.6V 175°C K50EF5 PG-TO247-
Highspeedswitchingseriesfifthgeneration
MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit Collector-emitter voltage V CE 650 V DCcollectorcurrent,limitedby T vjmax T C=25°Cvaluelimitedbybondwire T C=100°C
I C 80.
A
Pulsedcollectorcurrent, t plimitedby T vjmax I Cpuls 150.0 A Turnoffsafeoperatingarea V CE≤650V, T vj≤175°C - 150.0 A Diodeforwardcurrent,limitedby T vjmax T C=25°Cvaluelimitedbybondwire T C=100°C
I F 40.
A
Diodepulsedcurrent, t plimitedby T vjmax I Fpuls 150.0 A Gate-emitter voltage TransientGate-emittervoltage( t p≤10μs,D<0.010) V GE^
±30 V
Powerdissipation T C=25°C Powerdissipation T C=100°C P tot^
152.5 W
Operating junction temperature T vj -40...+175 °C Storage temperature T stg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M^ 0.6^ Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit Characteristic
IGBT thermal resistance, junction - case R th(j-c)^ 0.50^ K/W Diode thermal resistance, junction - case R th(j-c)^ 1.50^ K/W Thermal resistance junction - ambient R th(j-a)^40 K/W
Highspeedswitchingseriesfifthgeneration
ElectricalCharacteristic,at T vj=25°C,unlessotherwisespecified
Value min. typ. max. Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V (BR)CES V GE=0V, I C=0.20mA 650 - - V
Collector-emitter saturation voltage V CEsat
V GE=15.0V, I C=50.0A
T vj=25°C T vj=125°C T vj=175°C
V
Diode forward voltage V F
V GE=0V, I F=27.0A
T vj=25°C T vj=125°C T vj=175°C
V
Gate-emitter threshold voltage V GE(th) I C=0.50mA, V CE= V GE 3.2 4.0 4.8 V
Zero gate voltage collector current I CES
V CE=650V, V GE=0V
T vj=25°C T vj=175°C
μA
Gate-emitter leakage current I GES V CE=0V, V GE=20V - - 100 nA Transconductance g fs V CE=20V, I C=50.0A - 62.0 - S
ElectricalCharacteristic,at T vj=25°C,unlessotherwisespecified
Value min. typ. max. Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance C ies - 3000 - Output capacitance C oes - 65 - Reverse transfer capacitance C res - 11 -
V CE=25V, V GE=0V,f=1MHz pF
Gate charge Q G V V CCGE=520V,=15V I C=50.0A, - 120.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case
L E - 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value min. typ. max. Parameter Symbol Conditions Unit
IGBTCharacteristic,at T vj=25°C Turn-on delay time t d(on) - 21 - ns Rise time t r - 15 - ns Turn-off delay time t d(off) - 175 - ns Fall time t f - 18 - ns Turn-on energy E on - 0.49 - mJ Turn-off energy E off - 0.16 - mJ Total switching energy E ts - 0.65 - mJ
T vj=25°C, V CC=400V, I C=25.0A, V GE=0.0/15.0V, R G(on)=12.0Ω, R G(off)=12.0Ω, L σ=30nH, C σ=30pF L σ, C σfromFig.E Energy losses include “tail” and diode reverse recovery.
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,at T vj=150°C
Diode reverse recovery time t rr - 81 - ns Diode reverse recovery charge Q rr - 1.24 - μC Diode peak reverse recovery current I rrm - 22.0 - A Diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt^ -^ -340^ -^ A/μs
T vj=150°C, V R=400V, I F=25.0A, di F /dt =1200A/μs
Diode reverse recovery time t rr - 46 - ns Diode reverse recovery charge Q rr - 0.60 - μC Diode peak reverse recovery current I rrm - 19.5 - A Diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt^ -^ -825^ -^ A/μs
T vj=150°C, V R=400V, I F=6.0A, di F /dt =1200A/μs
Highspeedswitchingseriesfifthgeneration
Figure 1. Forwardbiassafeoperatingarea ( D =0, T C=25°C, T vj≤175°C; V GE=15V. Recommendeduseat V GE≥7.5V)
V CE,COLLECTOR-EMITTERVOLTAGE[V]
C I ,COLLECTORCURRENT[A]
1 10 100 1000
1
10
100
tp=1μs 10μs 50μs 100μs 200μs 500μs DC
Figure 2. Powerdissipationasafunctionofcase temperature ( T vj≤175°C)
T C,CASETEMPERATURE[°C]
tot P ,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
30
60
90
120
150
180
210
240
270
300
Figure 3. Collectorcurrentasafunctionofcase temperature ( V GE≥15V, T vj≤175°C)
T C,CASETEMPERATURE[°C]
C I ,COLLECTORCURRENT[A]
25 50 75 100 125 150 175 0
10
20
30
40
50
60
70
80
90
Figure 4. Typicaloutputcharacteristic ( T vj=25°C)
V CE,COLLECTOR-EMITTERVOLTAGE[V]
C I ,COLLECTORCURRENT[A]
0 1 2 3 4 5 0
15
30
45
60
75
90
105
120
135
150
VGE=20V 18V 15V 12V 10V 8V 7V 6V 5V
Highspeedswitchingseriesfifthgeneration
Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload, T vj=150°C, V CE=400V, V GE=15/0V, I C=25A,Dynamictestcircuitin Figure E)
r G,GATERESISTOR[Ω]
t ,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65 75 85
1
10
100
1000
td(off) tf td(on) tr
Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, V CE=400V, V GE=15/0V, I C=25A, r G=12Ω,Dynamictestcircuitin Figure E)
T vj,JUNCTIONTEMPERATURE[°C]
t ,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
1000 td(off) tf td(on) tr
Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( I C=0.5mA)
T vj,JUNCTIONTEMPERATURE[°C]
GE(th) V
,GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150
typ. min. max.
Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, T vj=150°C, V CE=400V, V GE=15/0V, r G=12Ω,Dynamictestcircuitin Figure E)
I C,COLLECTORCURRENT[A]
E ,SWITCHINGENERGYLOSSES[mJ]
0 30 60 90 120 150 0
1
2
3
4
5
6
7
8
9
10
11 Eoff Eon Ets
Highspeedswitchingseriesfifthgeneration
Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload, T vj=150°C, V CE=400V, V GE=15/0V, I C=25A,Dynamictestcircuitin Figure E)
r G,GATERESISTOR[Ω]
E ,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45 55 65 75 85
Eoff Eon Ets
Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, V CE=400V, V GE=15/0V, I C=25A, r G=12Ω,Dynamictestcircuitin Figure E)
T vj,JUNCTIONTEMPERATURE[°C]
E ,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
Eoff Eon Ets
Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, T vj=150°C, V GE=15/0V, I C=25A, r G=12Ω,Dynamictestcircuitin Figure E)
V CE,COLLECTOR-EMITTERVOLTAGE[V]
E ,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450 500
Eoff Eon Ets
Figure 16. Typicalgatecharge ( I C=50A)
Q GE,GATECHARGE[nC]
GE V ,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120 0
2
4
6
8
10
12
14
16 130V 520V
Highspeedswitchingseriesfifthgeneration
Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope ( V R=400V)
di F /dt ,DIODECURRENTSLOPE[A/μs]
rr Q ,REVERSERECOVERYCHARGE[μC]
500 700 900 1100 1300 1500
Tj=25°C, IF = 25A Tj=150°C, IF = 25A
Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope ( V R=400V)
di F /dt ,DIODECURRENTSLOPE[A/μs]
rr I ,REVERSERECOVERYCURRENT[A]
500 700 900 1100 1300 1500
5
7
9
11
13
15
17
19
21
23
25 Tj=25°C, IF = 25A Tj=150°C, IF = 25A
Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( V R=400V)
di F /dt ,DIODECURRENTSLOPE[A/μs]
rr dI /dt
,diodepeakrateoffallof
rr I [A/μs]
500 700 900 1100 1300 1500
0 Tj=25°C, IF = 25A Tj=150°C, IF = 25A
Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage
V F,FORWARDVOLTAGE[V]
F I ,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2. 0
9
18
27
36
45
54
63
72
81 Tj=25°C Tj=150°C
Highspeedswitchingseriesfifthgeneration
Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature
T vj,JUNCTIONTEMPERATURE[°C]
F V ,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
IF=13,5A IF=27A IF=54A
Highspeedswitchingseriesfifthgeneration
t
a b
t d(off) t f t d(on) t r
90% I C
10% I C
90% I C
10% V GE
10% I C
t
90% V GE
t
t
90% V GE
V GE (t)
t
t
t 1 t 4^ t
2% I C
10% V GE
2% V CE t 2 t 3
E t
t off =^ V^ x^ I^ x d t 1
2 CE C E t
t on =^ V^ x^ I^ x d t 3
4 CE C
CC
dI /dt F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching characteristics
Figure E. Dynamic test circuit
Figure D.
I (t) C
Parasitic inductance L , parasitic capacitor C , relief capacitor C , (only for ZVT switching)
s s r
t t t Q Q Q rr a b rr a b
= + = +
Q a Q b
V (^) CE (t)
V GE (t)
I (t) C
V (^) CE (t)
Testing Conditions
Highspeedswitchingseriesfifthgeneration
RevisionHistory
IKW50N65F Revision:2015-05-05,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-18 New Marking Pattern 2.1 2015-05-05 Final data sheet
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Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved.
LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered.