



Prepara tus exámenes y mejora tus resultados gracias a la gran cantidad de recursos disponibles en Docsity
Gana puntos ayudando a otros estudiantes o consíguelos activando un Plan Premium
Prepara tus exámenes
Prepara tus exámenes y mejora tus resultados gracias a la gran cantidad de recursos disponibles en Docsity
Prepara tus exámenes con los documentos que comparten otros estudiantes como tú en Docsity
Encuentra los documentos específicos para los exámenes de tu universidad
Estudia con lecciones y exámenes resueltos basados en los programas académicos de las mejores universidades
Responde a preguntas de exámenes reales y pon a prueba tu preparación
Consigue puntos base para descargar
Gana puntos ayudando a otros estudiantes o consíguelos activando un Plan Premium
Comunidad
Pide ayuda a la comunidad y resuelve tus dudas de estudio
Ebooks gratuitos
Descarga nuestras guías gratuitas sobre técnicas de estudio, métodos para controlar la ansiedad y consejos para la tesis preparadas por los tutores de Docsity
Datasheet de un componente eléctrico
Tipo: Apuntes
1 / 6
Esta página no es visible en la vista previa
¡No te pierdas las partes importantes!




Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetically Sealed Ceramic Eyelets
These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
Characteristics Max. Units VR 200 V
IF (AV) 35 A
IFSM 150 A
PD @ TC = 25°C 125 W
TJ, TSTG -55 to 150 °C
Parameter Cathode to Anode Voltage
Continuous Forward Current, T (^) C = 80°C
Single Pulse Forward Current , T (^) C = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
trr = 35ns
Notes: D.C. = 50% rectangle wave 1/2 sine wave, 60Hz, Pulse Width = 8.33ms
International Rectifier HiRel Products, Inc.
RJC Junction-to-Case, See Fig. 4 ––– 1.0 °C/W
Wt Weight 9.3 ––– g
VBR Cathode Anode Breakdown Voltage 200 ––– ––– V IR = 100μA
VFM Max Forward Voltage See Fig. 1
IRM Max Reverse Leakage Current ––– ––– 10 μA V (^) R VR Rated
See Fig. 2 (^) 1.0 mA VR VR Rated, T (^) J = 125°C
C (^) T Junction Capacitance, See Fig. 3 ––– ––– 200 pF V (^) R 200V
L (^) S Series Inductance ––– 7.8 ––– nH Measured from anode lead to Cathode lead, 6mm (0.25 in) from package
trr (^) Reverse Recovery Time ––– ––– 35 ns (^) IF = 1.0A, V (^) R = 30V, dif/dt = 200A/μs
trr1 Reverse Recovery Time ––– 45 ––– ns
trr2 See Fig. 5 ––– 68 ––– T (^) J = 125°C
IRRM1 (^) Peak Recovery Current ––– 3.3 ––– A
IRRM2 See Fig. 6 ––– 7.6 ––– T (^) J = 125°C
Q (^) rr1 Reverse Recovery Charge –––^76 –––^ nC
di (^) f/dt = 200A/μs Q (^) rr2 See Fig. 7^ –––^270 –––^ T^ J = 125°C
di (^) (rec)M /dt1 ––– 236 ––– A/μs
di (^) (rec)M /dt1 ––– 1020 ––– T (^) J = 125°C
Peak Rate of Fall of Recovery Current
During tb - See Fig. 8
Fig. 5 Typical Reverse Recovery Vs di (^) f /dt Fig. 6^ Typical Recovery Current Vs di^ f /dt
Fig. 7 Typical Stored Charge Vs di (^) f /dt Fig. 8^ Typical di^ (rec)M /dt Vs dif /dt
IRFP
D.U.T.
L = 70μH
V (^) R= 200V
0.01
G
D
S
dif/dt ADJUST
Fig. 9 Typical Reverse Recovery Parameter Test Circuit
t (^) a t (^) b
t rr
Q (^) rr
IF
I (^) RRM 0.5I (^) RRM di(rec)M/dt 0.75 I (^) RRM
5
4
3
2
0
(^1) di /dtf
Fig. 10 Reverse Recovery Waveform and Definitions
di (^) f /dt - Rate of change of current through zero crossing. I (^) RRM - Peak reverse recovery current. t (^) rr - Reverse recovery time measured from zero crossing point of negative going I (^) F to point where a line passing through 0.75I (^) RRM and 0.5IRRM extrapolated to zero current. Qrr - Area under curve defined by t (^) rr and I (^) RRM - Qrr = (t (^) rr X IRRM ) / 2 di (^) (rec)M / dt - Peak rate of change of current during t (^) b position of t (^) rr.
100 1000 dif / dt - ( A / μs )
30
50
70
90
trr
VR = 160V TJ = 125°C TJ = 25°C
IF = 17.5A
IF = 70A
IF = 35A
100 1000 dif / dt - ( A / μs )
1
10
100
IRRM
VR = 160V TJ = 125°C TJ = 25°C
IF = 17.5A
IF = 70A IF = 35A
100 1000 dif / dt - ( A / μs )
10
100
1000
Q
rr
VR = 160V TJ = 125°C TJ = 25°C
IF = 17.5A
IF = 70A IF = 35A
100 1000 dif / dt - ( A / μs )
100
1000
10000
di
( rec )M
/ dt - ( A / μs )
VR = 160V TJ = 125°C TJ = 25°C
IF = 17.5A
IF = 70A IF = 35A
3.81 [.150]
0.12 [.005]
1.27 [.050] 1.02 [.040]
6.60 [.260] 6.32 [.249]
C 14.48 [.570] 12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045] 0.89 [.035]
2X
3.81 [.150]
NOTES:
20.32 [.800] 20.07 [.790]
13.84 [.545] 3.78 [.149] 13.59 [.535] 3.53 [.139]
17.40 [.685] 16.89 [.665]
A
1 2 3
13.84 [.545] 13.59 [.535]
0.84 [.033] MAX.
B
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
Refer to page 1.
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534- San Jose, California 95134, USA Tel: +1 (408) 434- Data and specifications subject to change without notice.