DATASHEET 2n2222 Electrónico, Apuntes de Teoría de Circuitos

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DATA SHEET

Product specification

Supersedes data of September 1994

File under Discrete Semiconductors, SC

1997 May 29

DISCRETE SEMICONDUCTORS

2N2222; 2N2222A

NPN switching transistors

M3D

NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)
• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

PIN DESCRIPTION

1 emitter 2 base 3 collector, connected to case

Fig.1 Simplified outline (TO-18) and symbol.

handbook, halfpage

MAM264 1

3

2 3

1 2

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltage open base 2N2222 − 30 V 2N2222A − 40 V IC collector current (DC) − 800 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = 10 mA; V (^) CE = 10 V 75 − fT transition frequency IC = 20 mA; V (^) CE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz toff turn-off time ICon = 150 mA; I (^) Bon = 15 mA; I (^) Boff = −15 mA − 250 ns

NPN switching transistors 2N2222; 2N2222A

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I (^) CBO collector cut-off current 2N2222 IE = 0; V (^) CB = 50 V − 10 nA IE = 0; V (^) CB = 50 V; Tamb = 150 °C − 10 μA ICBO collector cut-off current 2N2222A IE = 0; V (^) CB = 60 V − 10 nA IE = 0; V (^) CB = 60 V; Tamb = 150 °C − 10 μA IEBO emitter cut-off current IC = 0; V (^) EB = 3 V − 10 nA hFE DC current gain IC = 0.1 mA; VCE = 10 V 35 − IC = 1 mA; V (^) CE = 10 V 50 − IC = 10 mA; V (^) CE = 10 V 75 − IC = 150 mA; V (^) CE = 1 V; note 1 50 − IC = 150 mA; V (^) CE = 10 V; note 1 100 300 hFE DC current gain IC = 10 mA; V (^) CE = 10 V; Tamb = − 55 °C 2N2222A 35 − hFE DC current gain IC = 500 mA; V (^) CE = 10 V; note 1 2N2222 30 − 2N2222A 40 − VCEsat collector-emitter saturation voltage 2N2222 IC = 150 mA; I (^) B = 15 mA; note 1 − 400 mV I (^) C = 500 mA; I (^) B = 50 mA; note 1 − 1.6 V VCEsat collector-emitter saturation voltage 2N2222A IC = 150 mA; I (^) B = 15 mA; note 1 − 300 mV I (^) C = 500 mA; I (^) B = 50 mA; note 1 − 1 V VBEsat base-emitter saturation voltage 2N2222 IC = 150 mA; I (^) B = 15 mA; note 1 − 1.3 V I (^) C = 500 mA; I (^) B = 50 mA; note 1 − 2.6 V VBEsat base-emitter saturation voltage 2N2222A IC = 150 mA; I (^) B = 15 mA; note 1 0.6 1.2 V I (^) C = 500 mA; I (^) B = 50 mA; note 1 − 2 V Cc collector capacitance IE = i (^) e = 0; V (^) CB = 10 V; f = 1 MHz − 8 pF Ce emitter capacitance IC = i (^) c = 0; VEB = 500 mV; f = 1 MHz 2N2222A − 25 pF fT transition frequency IC = 20 mA; V (^) CE = 20 V; f = 100 MHz 2N2222 250 − MHz 2N2222A 300 − MHz F noise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ; 2N2222A f = 1 kHz; B = 200 Hz − 4 dB

NPN switching transistors 2N2222; 2N2222A

Note

1. Pulse test: t (^) p ≤ 300 μs; δ ≤ 0.02.

Switching times (between 10% and 90% levels); see Fig. t (^) on turn-on time ICon = 150 mA; I (^) Bon = 15 mA; I (^) Boff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Vi = 9.5 V; T = 500 μs; tp = 10 μs; t (^) r = t (^) f ≤ 3 ns. R1 = 68 Ω; R2 = 325 Ω; R (^) B = 325 Ω; R (^) C = 160 Ω. VBB = −3.5 V; VCC = 29.5 V. Oscilloscope input impedance Zi = 50 Ω.

ndbook, full pagewidth

RC

R

R

DUT

MLB

Vo

RB (probe) 450 Ω

(probe) oscilloscope (^450) Ω oscilloscope

VBB

Vi

VCC

Fig.2 Test circuit for switching times.

NPN switching transistors 2N2222; 2N2222A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification.

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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 May 29 Document order number: 9397 750 02161