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OVERVIEW
Memory 1997 provides detailed coverage of the recents trends associated with DRAM, SRAM,
EPROM, and flash memory IC devices. Market direction and technology inclinations for each
product segment are covered in separate sections. Details of the ROM and EEPROM markets are
referenced in this section.
The memory market is often looked upon to introduce new and innovative devices. Demands
from customers for more sophisticated and technically advanced systems necessitate that new IC
products enter the market. When new products are introduced to the marketplace, existing IC
components are pushed further along the product lifecycle. Figure 1-1 provides ICE’s view of
where several memory ICs will be located in the 1997 product lifecycle.
INTEGRATED CIRCUIT ENGINEERING CORPORATION 1-
PRODUCT INTRODUCTION GROWTH MATURITY SATURATION DECLINE (OBSOLETE)
64K DRAM RAMs (^) HIGH SPEED CMOS/BiCMOS
SALES
32K EPROM ROMs 16K EPROM
32M Flash 8M Flash
4M Flash (^) 256K Flash 512K Flash
1M DRAM (^) 256K DRAM 256K SRAM 64K SRAM 16K SRAM 4K ECL SRAM 16K ECL SRAM
4M DRAM 1M SRAM 1M SRAM 64K SRAM 16K SRAM 64K ECL SRAM
256K SRAM
1M ROM
256K ROM 4M ROM 64K ROM 64K PROM 32K PROM 16K PROM 1M EPROM 256K EPROM 64K EPROM
256K EEPROM 64K EEPROM 16K EEPROM
128K PROM
512K EPROM 128K EPROM 32K EEPROM 4K EEPROM
16M ROM
4M EPROM
8M ROM
16M DRAM 4M SRAM
1M EEPROM
32M ROM 64M ROM
16M EPROM 4M EEPROM
64M DRAM
Source: ICE, "Memory 1997" 20175B
1M Flash 2M Flash
64M Flash 16M Flash
Figure 1-1. Memory Product Lifecycle (1997)
Figure 1-2 shows the worldwide MOS memory and IC markets through 2002. In 1996, MOS
memory devices accounted for 31 percent of the IC market. This was down significantly from
1995 when MOS memory devices accounted for 42 percent of the total IC market, the highest level
in semiconductor history. In 1997, the memory portion of the overall IC market is forecast to
decrease to 25 percent. In fact, the memory market will likely remain less than one-third of the
total IC market through the year 2002, which is a dramatic shift from market conditions during
the first half of the 1990’s.
Despite the fact that the memory IC market is forecast to be a smaller percentage of the total IC
market through the year 2002, the memory IC market is expected to grow at a better annual rate
between 1997 and 2002 than it did between 1992 and 1996 (Figure 1-3).
It is interesting to note just how great an impact the MOS memory market has on the overall IC
market. Figure 1-4 shows the percent increase/decrease in the IC market during the past two
years and the forecast for 1997. With 30 percent growth, the IC market (not including memory
1-2^ INTEGRATED CIRCUIT ENGINEERING CORPORATION
18909F
Dollars (Millions)
29% 31%^ 36%^
25% 25%^ 26%^
= Percent Memory of Total IC Market
Year
Source: ICE, "Memory 1997"
WW IC Market ($M) WW Memory Market ($M) Other IC Market ($M) Percent Memory of IC Market
Figure 1-2. MOS Memory Percent of Total Worldwide IC Market ($M)
1-4^ INTEGRATED CIRCUIT ENGINEERING CORPORATION
1995/1994 1996/1995 1997/1996(FCST)
Percent Change
Source: ICE, "Memory 1997" 22424
IC Market ($M) (Including Memory) IC Market ($M) (Excluding Memory)
IC Market Growth (Including Memory) IC Market Growth (Excluding Memory)
Year 1995 1996 1997
Figure 1-4. Effects of Memory Market on Total IC Market
WW IC Market ($M) WW MOS Memory Market ($M) WW Memory Percent Change Percent Memory of Total IC DRAM ($M) SRAM ($M) EPROM ($M) Flash ($M) ROM ($M) EEPROM ($M) Other Memory ($M) Total MOS Memory ($M)
Source: ICE, "Memory 1997" 18914H
Figure 1-5. MOS Memory Market Forecast
Despite a one or two-year period of
“slower” market growth, ICE shows
in Figure 1-6 that the 10-year aver-
age annual growth rate of the MOS
memory market looks bright. Only
ROMs, EPROMs, and the “other
memory” (i.e., FIFOs, etc.) cate-
gories are shown experiencing
declining markets through the year
In terms of dollar volume, DRAMs
make up the majority of MOS
memory sales and are forecast to be
the dominant memory product through the year 2002 (Figure 1-7). In fact, ICE forecasts that in
the year 2002, 80 percent of the MOS memory market will be attributed to DRAM sales as shown
in Figure 1-8.
INTEGRATED CIRCUIT ENGINEERING CORPORATION 1-
DRAM
SRAM
EPROM
FLASH
ROM
EEPROM
Other Memory Total Memory
Source: ICE, "Memory 1997" 22425
Figure 1-6. Ten Year Average Annual
Growth Rates (1992-2002)
Year
Dollars (Millions)
Source: ICE, "Memory 1997" 18902E
DRAM ($M)
SRAM ($M)
EPROM ($M)
Flash ($M)
Figure 1-7. Dollar Volume of MOS Memory Product Segments
A brief review of regional MOS memory consumption is shown in Figure 1-11. Driven by sales of
new computers and upgrades to existing computer systems, the North America region led the
world in the consumption of memory ICs in 1995 and in 1996. Furthermore, it is forecast to remain
the leading consuming region in 1997.
The ROW region (Korea, Taiwan, et al), increased its share of memory IC consumption during the
past few years. For many years, the ROW was primarily a consumer of memory ICs that were
installed in various electronic systems then shipped abroad. More recently, however, the ROW’s
consumption of memory ICs has been to meet the growing domestic demand created by a matur-
ing market-driven economy. Strong local economies in this region (along with greater disposable
income) will only lead to further consumption of MOS memory devices in the ROW region in the
coming years.
INTEGRATED CIRCUIT ENGINEERING CORPORATION 1-
Year
Units (Millions)
Source: ICE, "Memory 1997" 22426
DRAM (M)
SRAM (M)
EPROM (M)
Flash (M) ROM (M) EEPROM (M) Other Memory Total Memory Units (M)
Figure 1-9. MOS Memory Unit Shipments by Product
1-8^ INTEGRATED CIRCUIT ENGINEERING CORPORATION
Units (Millions) Percent Change
Source: ICE, "Memory 1997" 22427
Total Memory Units (M) Percent Change
Total Memory Units (M) Percent Change
Figure 1-10. Total MOS Memory Unit Shipments
North America 37%
Japan 23%
Europe 18% ROW 22%
18912J
North America 38%
Japan 19%
Europe 18%
ROW 25%
$53.5B
1997 (FCST)
$31.0B
North America 38%
Japan 20%
Europe 19%
ROW 23%
$36.0B
Source: ICE, "Memory 1997"
Figure 1-11. MOS Memory Consumption by Region
Samsung continued to set the pace as the leading supplier of MOS memory devices in 1996. In
fact, it increased its marketshare in 1996. NEC, Toshiba, and Hitachi, three leading Japanese IC
suppliers, maintained their leading positions. New to the top memory IC supplier list in 1996 was
Korea’s Hyundai. Its 1996 memory sales were solely from DRAM devices.
1-10^ INTEGRATED CIRCUIT ENGINEERING CORPORATION
EEPROM
$785M
ROM
$1,340M
SRAM
$4,745M
EPROM
$1,105M
DRAM
$25,130M
North American Companies European Companies
Japanese Companies ROW Companies 14516R
Percentage
Flash $2,610M
Source: ICE, "Memory 1997"
Figure 1-13. 1996 MOS Memory Production by Product Segment ($M)
0
20
40
60
80
100
1993 1994 1995 1996
62%
25%
54%
28%
49% 33% 35%
49% Percent
DRAM
0
20
40
60
80
100
1993 1994 1995 1996
67% (^) 62%
6% 10%
20% 22%
47% 47% Percent
SRAM JAPAN =ROW
Source: ICE, "Memory 1997" 21185B
Figure 1-14. ROW (Korea) Muscles Production from Japan
In Figure 1-16, ICE shows the memory IC usage by system type. Over the course of five years,
end-use applications for memory devices changed very little while the market tripled in size.
THE ROM MARKET
Read-only memories (ROMs) represent the least expensive type of semiconductor memory. They
are used primarily for storing data in electronic equipment such as laser printer fonts, dictionary
data in word processors, and sound-source data in electronic musical instruments. ROMs are
also used extensively in video game software. The ROM market grew well through the first half
of the 1990’s, coinciding closely with a jump in PC sales and other consumer-oriented electronic
systems (Figure 1-17).
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Rank
Other Total
Samsung NEC Hitachi Toshiba Hyundai
Company Sales($M) Marketshare(%)
Samsung NEC Hitachi Toshiba TI
Company Sales($M) Marketshare(%)
Source: ICE, "Memory 1997" 14495R
Figure 1-15. Total MOS Memory Market Leaders
1991 $12.3B
1996 $36.0B Computer 68%
Communications 10%
Consumer 10%
Industrial 8% Auto 2% Auto 2%
Military 1% (^) Industrial Military 1% 7% Communications 8%
Consumer 13%
Computer 70%
Source: WSTS/ICE, "Memory 1997" 21759A
Figure 1-16. Memory IC Usage by System Type
INTEGRATED CIRCUIT ENGINEERING CORPORATION 1-
Dollars (Millions)
Year
Source: WSTS/ICE, "Memory 1997" 20348F
ROM Market ($M) Percent Change
Percent Change
Figure 1-18. The ROM Market
Units (Millions)
Year
Source: WSTS/ICE, "Memory 1997" 20608A
Total Units (M) Percent Change
Percent Change
Figure 1-19. ROM Unit Shipments
Of the ROM units that continue to ship, more and more are high-density devices. Figure 1-
shows the trend toward high-density ROM devices. Most manufacturers kept their ROM pro-
duction at the 4Mbit level. However, companies such as Sharp, NEC, and Macronix developed
mask ROMs at and above the 32Mbit density.
Through the first half of the decade, the average selling price (ASP) for ROM devices increased
mostly due to the transition to higher density devices (Figure 1-21). Although the ROM ASP
declined in 1996, a smaller ROM market moving toward higher densities may force ASPs to trend
upward in the second half of the decade.
ROM consumption by geographic region is shown in Figure 1-22. Despite marketshare gains
made by vendors in the ROW region, Japanese IC makers continued to hold a tight grip as the
leading suppliers of ROM ICs (Figure 1-23). Together, Sharp and NEC held about half of the ROM
market in 1995 and 1996. A few notes of activity from selected ROM suppliers are shown below.
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Units (Millions)
Source: WSTS/ICE, "Memory 1997" 20609A
≤2M
4M
8M
≥8M
Year
Total Units (M)
Figure 1-20. ROM Unit Shipments by Density
Sharp targeted the 32-bit embedded applications market when it introduced two ROMs (1Mbit x
32 and 2Mbit x 16) in late 1996. Designed especially for 32-bit embedded systems, Sharp expects
its new 3V devices to be a popular choice in applications such as font storage in laser and ink-jet
printers where cost is critical and performance demands are high. Sharp believes its new devices
will help reduce overall parts count, eliminate some system overhead, and improve overall system
performance.
NEC
In 4Q96, NEC began taking orders for high-speed 32Mbit mask ROMs that operate at 3V.
Targeting office and game machine program and fixed-data storage applications, the devices were
initially priced at $27.50. Initial shipments were to begin at the rate of 350,000 units per month.
Macronix
Based on its proprietary Flat ROM cell technology, Macronix developed and now offers a ROM
family ranging from 4Mbits to 16Mbits. The devices are manufactured using a 0.8μm process
technology. The company is eager to move to the 32Mbit density for its ROM products. At this
level, the devices will be manufactured using 0.6μm design rules.
American Microsystems Inc. (AMI)
Although not a leading ROM supplier, AMI unveiled two high-speed (45ns and 70ns) 1Mbit
devices targeted for disk drive applications. Initial versions operated at 5V, but the company
plans to introduce parts based on 3.3V technology in 1997.
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14496T
Rank Company Sales($M) Marketshare(%)
1 2 3 4 5 Other Total
Sharp NEC Macronix Toshiba Hitachi
Sharp NEC Samsung Toshiba Hitachi
Company Sales($M) Marketshare(%)
Source: ICE, "Memory 1997"
Figure 1-23. ROM Market Leaders
Siemens
An interesting ROM development targeting the multimedia market is the Record-On-Silicon
(ROS) device from Siemens. With a 50-percent reduction in die area compared with conventional
ROM, the company claims the ROS could halve the cost of conventional ROM and push into mar-
kets for non-semiconductor storage, such as compact disks and photographic film. A 64Mbit ver-
sion of the device is planned for introduction in 1997.
Fujitsu
In recent years, a few ROM suppliers announced intentions to withdraw from the mask ROM
business. Fujitsu, for example, cancelled development efforts of its 32Mbit and other next-gener-
ation ROM devices and stopped producing and shipping its line of 16Mbit-and-smaller products
in 1996.
THE EEPROM MARKET
EEPROMs (electrically erasable programmable read only memories) offer users excellent capabil-
ities and performance. Two key advantages of using EEPROMs include in-system reprogramma-
bility and small, bit by bit erasure capability.
The EEPROM market forecast through the year 2002 is shown in Figure 1-24. In 1996, the
EEPROM market was up four percent after posting two years of 20-plus percent growth. ICE fore-
casts that through the year 2002, the EEPROM market will average 11 percent growth per year.
EEPROM consumption by region is shown in Figure 1-25. Due in part to military use, North
America was the largest regional market for EEPROMs in 1996.
EEPROMs are available in either a serial or parallel version. Parallel devices are generally
faster, offer high endurance and reliability, but also cost more than their serial counterparts.
Parallel EEPROMs are found mostly in the military market. Serial EEPROMs, though gener-
ally less dense and slower than parallel devices, are much cheaper and used in more of the
“commodity” applications.
ICE estimates that serial EEPROMs accounted for 92 percent of the $885 million EEPROM market
in 1996 (Figure 1-26). With few exceptions, the largest serial EEPROM density shipping in volume
was the 64Kbit device. Companies such as Atmel, Xicor, and SGS-Thomson supplied the large
majority of these devices.
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The largest parallel EEPROMs built in volume during 1996 were 1Mbit devices. They were used
extensively, although not exclusively, in military applications. Parallel EEPROMs are of particular
interest in the military because they offer more flexibility than other kinds of solid-state memory.
Parallel EEPROMs can be found in military applications such as flight controllers, vehicle control
systems, field communications equipment, secure radios, command and control systems, radar,
and guidance subsystems. The lightness, ruggedness, and fast performance of parallel EEPROMs
make them well suited for harsh environments.
Consumer-oriented applications rep-
resented the largest end-use of serial
EEPROMs in 1996 (Figure 1-27). Led
by low-voltage parts, EEPROM sup-
pliers in 1996 found a healthy and
vibrant business in rapidly growing
portable consumer and industrial
applications.
Small density serial EEPROMs were
used extensively in portable, bat-
tery-powered devices including
pagers, modems, and cellular and cordless phones. They have also showed up in parameter and
configuration setups in disk drives, printers, and industrial data-acquisition applications. In auto-
motive applications, EEPROMs are used in air bags, antilock braking systems, and car radios.
Newer EEPROM applications include satellite communication boxes and monitors and sense-
detect functions in memory modules. Suppliers are also excited about the potential of EEPROMs
in the smart-card market.
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$920M
Serial EEPROM 92% Parallel EEPROM 8%
Source: ICE, "Memory 1997"^ 20413C
Figure 1-26. 1996 EEPROM Market by Type
Consumer 36%
Telecom 20%
Industrial 15%
Office 7%
Automotive 8%
Military/Aerospace 7%
Computer-Related 7%
Units
Source: ICE, "Memory 1997" 19520D
Figure 1-27. Serial EEPROM Applications
Most leading manufacturers have begun to offer their devices in low-voltage versions. SGS-
Thomson’s Eagle Range serial EEPROM family, for example, supports operation as low as 1.8V
and its next generation will support 1V operation. In 3Q96, Atmel introduced the first 3V 1Mbit
parallel EEPROM.
Innovative features have been added to EEPROMs by many manufacturers. In 1996, Xicor intro-
duced Block Lock protection on two of its EEPROMs. By allowing a user to partition its device
with 25, 50, or 100 percent write protection, Block Lock allows the combination of alterable data
with secured data.
Several vendors agree that EEPROM technology is facing increased competition from flash
memory. However, flash memory remains a mass-storage technology and is virtually unavailable
(and not as cost effective) in densities under 1Mbit. EEPROMs, on the other hand, are mainly used
for storing small amounts of data that are frequently changed.
Leading EEPROM suppliers are shown in Figure 1-28. Atmel, SGS-Thomson, and Xicor contin-
ued to make strides in the market. For these and other companies that manufacture them, the
EEPROM business should remain reasonably healthy and stable through 2002.
SGS-Thomson
To meet a growing need, SGS-Thomson developed its “Super Flash” device, a part that combines
non-volatile flash technology and full-featured EEPROM functionality. A key benefit of a com-
bined EEPROM/flash chip, compared with the common technique of simulating EEPROM in
flash memory, is that the host controller can read the flash memory while an EEPROM write cycle
is in progress. SGS-Thomson plans to introduce the part in 1997.
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14498R
Rank Company Sales($M) Marketshare(%)
1 2 3 4 5 6 SGS-Thomson Atmel Xicor Microchip National Siemens
280 180 115 109 70 66 100 920
30 20 12 12 8 7 11 100
167 154 100 85 64 53 262 885
19 17 11 10 7 6 30 100
1996
Company Sales($M) Marketshare(%)
SGS-Thomson Atmel Xicor Microchip National Siemens Other Total
— — Source: ICE, "Memory 1997"
1995
Figure 1-28. EEPROM Market Leaders
